DN2470_07 Datasheet, PDF (1/3 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FET

DN2470
N-Channel Depletion-Mode Vertical DMOS FET
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear amplifiers
► Constant current sources
► Battery operated systems
► Telecom
Ordering Information
BV /BV
DSX
DGX
700V
R (max)
DS(ON)
42Ω
General Description
The DN2470 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FET is ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
I (min)
DSS
500mA
Package Options
TO-252 (D-PAK)
DN2470K4-G
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSX
BV
DGX
±20V
Operating and storage
temperature
-55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Package Option
Drain
Gate
Source
TO-252 (D-PAK)
(top view)