2N7002 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV_DSS /
BV_DGS
60V
R_DS(ON)
(max)
7.5Ω
I_D(ON)
(min)
0.5A
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
TO-236AB*
2N7002
Product marking for TO-236AB:
702p
where p = 2-week alpha date code
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C_ISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Driver (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
± 30V
-55°C to +150°C
300°C
Gate
Source
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
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