2N7000 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BV_DSS /
BV_DGS
60V
R_DS(ON)
(max)
5.0Ω
I_D(ON)
(min)
75mA
Order Number / Package
TO-92
2N7000
Features
s Free from secondary breakdown
s Low power drive requirement
s Ease of paralleling
s Low C_ISS and fast switching speeds
s Excellent thermal stability
s Integral Source-Drain diode
s High input impedance and high gain
s Complementary N- and P-channel devices
Applications
s Motor controls
s Converters
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
± 30V
-55°C to +150°C
300°C
7-5
SGD
TO-92
Note: See Package Outline section for dimensions.