BZV55C Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – ZENER DIODES

BZV55
SILICON PLANAR ZENER DIODES
APPLI CAT I O N S
Low voltage stabilizers or voltage references
LL-34
FEAT U R E S
Total power dissipation: max. 500 mW
Two tolerance series: ± 2% and approx. ± 5%
Suntan®
Glass Case MiniMELF
Dimensions in mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings Ta=25℃
PARAMETER
SYMBOL
Power Dissipation
Ptot
Junction and Storage Temperature Range
Tj, Tstg
1)Valid provided that electrodes are kept at ambient temperature.
VALUE
5001)
-65 to + 200
Characteristics at Ta=25℃
PARAMETER
SYMBOL
Thermal Resistance Junction to Ambient Air
RthA
Forward Voltage at IF = 100 mA
VF
1) _{Valid provided that electrodes are kept at ambient temperature.}
MAX
0.3¹⁾
0.9
UNIT
mW
℃
UNIT
K/mW
V
BZV55B…
Or
BZV55C…
2V4
2V7
3V0
SILICON PLANAR ZENER DIODES BZV55
Zener Voltage Range ¹⁾
Dynamic Resistance
V ZT ( V)
IZT
Z_ZT at I_ZT
ZZk
at IZK
BZV55B (Tol. ± 2%)
BZV55C (Tol. ± 5%)
(mA) Max. (Ω) Max. (Ω)
(mA)
2.35…2.45
2.2…2.6
5
100
600
1
2.65…2.75
2.5…2.9
5
100
600
1
2.94…3.06
2.8…3.2
5
95
600
1
Reverse Current
I_R
at V_R
Max. (µA)
(V)
50
1
20
1
10
1
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