X0205MN Datasheet, PDF (2/4 Pages) Suntac Electronic Corp. – Sensitive Gate Silicon Controlled Rectifier

X0205MN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction to Case
– Junction to Ambient
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
Symbol
R_θJC
R_θJA
T_L
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1.)
(V_D = Rated V_DRM and V_RRM; R_GK = 1.0 kΩ)
ON CHARACTERISTICS
Peak Forward On–State Voltage^(*)
(I_TM = 1.0 Amp Peak @ T_A = 25°C)
Gate Trigger Current (Continuous dc) (Note 2.)
(V_AK = 12 V, R_L = 100 Ohms)
Holding Current (Note 2.)
(V_AK = 12 V, I_GT = 0.5 mA)
Latch Current
(V_AK = 12 V, I_GT = 0.5 mA, R_GK = 1.0 k)
Gate Trigger Voltage (Continuous dc) (Note 2.)
(V_AK = 12 V, R_L = 100 Ohms, I_GT = 10 mA)
I_DRM, I_RRM
T_C = 25°C
–
T_C = 110°C
–
V_TM
–
T_C = 25°C
I_GT
–
T_C = 25°C
I_H
–
T_C = –40°C
–
T_C = 25°C
I_L
–
T_C = –40°C
–
T_C = 25°C
V_GT
–
T_C = –40°C
–
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(V_D = Rated V_DRM, Exponential Waveform, R_GK = 1000 Ohms,
T_J = 110°C)
Critical Rate of Rise of On–State Current
(I_PK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
1. R_GK = 1000 Ohms included in measurement.
2. Does not include R_GK in measurement.
dV/dt
20
di/dt
–
Max
75
200
260
Typ
–
–
–
8
0.5
–
0.6
–
0.62
–
35
–
Unit
°C/W
°C
Max
Unit
10
µA
0.1
mA
1.7
Volts
20
µA
5.0
mA
10
10
mA
15
0.8
Volts
1.2
–
V/µs
50
A/µs
2