|
X0105DN Datasheet, PDF (2/4 Pages) Suntac Electronic Corp. – Sensitive Gate Silicon Controlled Rectifier | |||
|
◁ |
X0105DN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance â Junction to Case
â Junction to Ambient
Lead Solder Temperature
(t1/16â³ from case, 10 secs max)
Symbol
RθJC
RθJA
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1.)
(VD = Rated VDRM and VRRM; RGK = 1.0 kâ¦)
ON CHARACTERISTICS
IDRM, IRRM
TC = 25°C
â
TC = 110°C
â
Peak Forward OnâState Voltage(*)
(ITM = 1.0 Amp Peak @ TA = 25°C)
VTM
â
Gate Trigger Current (Continuous dc) (Note 2.)
TC = 25°C
IGT
â
(VAK = 12 V, RL = 100 Ohms)
Holding Current (Note 2.)
(VAK = 12 V, IGT = 0.5 mA)
TC = 25°C
IH
â
TC = â40°C
â
Latch Current
(VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k)
TC = 25°C
IL
â
TC = â40°C
â
Gate Trigger Voltage (Continuous dc) (Note 2.)
TC = 25°C
VGT
â
(VAK = 12 V, RL = 100 Ohms, IGT = 10 mA)
TC = â40°C
â
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffâState Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
Critical Rate of Rise of OnâState Current
(IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width ⤠1.0 ms, Duty Cycle ⤠1%.
1. RGK = 1000 Ohms included in measurement.
2. Does not include RGK in measurement.
dV/dt
20
di/dt
â
Max
75
200
260
Typ
â
â
â
8
0.5
â
0.6
â
0.62
â
35
â
Unit
°C/W
°C
Max
Unit
10
µA
0.1
mA
1.7
Volts
20
µA
5.0
mA
10
10
mA
15
0.8
Volts
1.2
â
V/µs
50
A/µs
2
|
▷ |