STC8550 Datasheet, PDF (2/2 Pages) Suntac Electronic Corp. – PNP Silicon Transistor

Typical Characteristics
STC8550
-0.5
IB=-4.0mA
-0.4
IB=-3.5mA
IB=-3.0mA
-0.3
IB=-2.5mA
IB=-2.0mA
-0.2
IB=-1.5mA
IB=-1.0mA
-0.1
IB=-0.5mA
-0.4
-0.8
-1.2
-1.6
-2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10000
IC=10IB
-1000
-100
VBE(sat)
VCE(sat)
-10
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
f=1MHz
IE=0
1000
100
VCE = -1V
10
1
-0.1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-100
VCE = -1V
-10
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
VCE=-10V
10
100
1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product