STC2SB772_TO126 Datasheet, PDF (2/2 Pages) Suntac Electronic Corp. – PNP EPITAXIAL SILICON TRANSISTOR

STC 2SB772
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
A
RANGE
100-200
B
200-300
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
1.6
1.2
0.8
0.4
0
0
-IB=9mA
-IB=8MA
-IB=7mA
-IB=6mA
-IB=5mA
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
4
8
12
16
20
-Collector-Emitter voltage(V)
Fig.2 Derating curve of safe
operating areas
150
100
S/b _limited
50
0
-50
0
50
100
150
200
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
103
IE=0
f=1MHz
102
101
Fig.5 Current gain-
bandwidth product
103
VCE=5V
102
IB=8mA
101
100
10 ⁰
10-1
10-2
10-3
-Collector-Base Voltage(v)
100
10-2
10-1
10 ⁰
101
Ic,Collector current(A)
Fig.3 Power Derating
12
8
4
0
-50
0
50
100
150
200
Tc,Case Temperature(°C)
Fig.6 Safe operating area
101 ^{Ic(max),Pulse}
Ic(max),DC ^10mS
1mS
10 ⁰
10-1
10-2
10 ⁰
101
102
Collector-Emitter Voltage
Fig.7 DC current gain
103
VCE=-2V
102
101
100
100
101
102
103
104
-Ic,Collector current(mA)
Fig.8 Saturation Voltage
104
103
VBE(sat)
102
VCE(sat)
101
100
100
101
102
103
104
-Ic,Collector current(mA)
U
2