ST1N60 Datasheet, PDF (2/4 Pages) Suntac Electronic Corp. – POWER MOSFET

ORDERING INFORMATION
Part Number
Package
.................ST1N60-251...........................................TO-251
.................ST1N60-252...........................................TO-252
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 Ó´A)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125к)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Ó´A)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) *
Forward Transconductance (VDS Њ 50 V, ID = 0.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 1.0 A,
VGS = 10 V,
RG = 18ȍ) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 1.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 1.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
ST1N60
POWER MOSFET
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CST1N60
Min
Typ
Max
600
0.1
0.3
100
100
2.0
4.0
8.0
0.5
210
28
4.2
8
21
18
24
8.5
14
1.8
4
4.5
7.5
Units
V
mA
nA
nA
V
ȍ
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
1.5
V
ton
**
ns
trr
350
500
ns
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