SDB0900E70 Datasheet, PDF (2/6 Pages) Suntac Electronic Corp. – silicon bilateral voltage triggered switch

Sidac
Data Sheets
Type
Part No.
(10)
Do
not
use
tab
I_T(RMS)
(6) (7) (8)
V_DRM
V_BO
(1)
I_DRM
I_BO
(2)
I_H
(3) (4)
TO-92
DO-15X
Pin 1
Pin 3
Pin 2
Do not use
TO-202
DO-214
See “Package Dimensions” section for variations. (9)
SDB0900E70
SDB1050E70
SDB1100E70
SDB1200E70
SDB1300E70
SDB1400E70
SDB1500E70
SDB2000E70
SDB2200E70
SDB2400E70
SDB2500E70
SDB0900G
SDB1050G
SDB1100G
SDB1200G
SDB1300G
SDB1400G
SDB1500G
SDB2000G
SDB2200G
SDB2400G
SDB2500G
SDB2000F1
SDB2200F1
SDB2400F1
SDB2500F1
SDB3000F1
SDB0900S
SDB1050S
SDB1100S
SDB1200S
SDB1300S
SDB1400S
SDB1500S
SDB2000S
SDB2200S
SDB2400S
SDB2500S
Amps
MAX
1
1
1
1
1
1
1
1
1
1
1
1
Volts
MIN
±70
±90
±90
±90
±90
±90
±90
±180
±180
±190
±200
±200
Volts
MIN
MAX
79
97
95
113
104
118
110
125
120
138
130
146
140
170
190
215
205
230
220
250
240
280
270
330
µAmps
MAX
5
5
5
5
5
5
5
5
5
5
5
5
µAmps
MAX
10
10
10
10
10
10
10
10
10
10
10
10
mAmps
TYP MAX
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated V_DRM;
T_J d 100 °C
I_BO — Breakover current 50/60 Hz sine wave
I_DRM — Repetitive peak off-state current 50/60 Hz sine wave; V = V_DRM
I_H — Dynamic holding current 50/60 Hz sine wave; R = 100 :
I_T(RMS) — On-state RMS current T_J d 125 °C 50/60 Hz sine wave
I_TSM — Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
R_S — Switching resistance
RS
=
_{---V----B-----O------}–_{----V-----S----}
IS – I_BO
50/60 Hz sine wave
V_BO — Breakover voltage 50/60 Hz sine wave
V_DRM — Repetitive peak off-state voltage
V_TM — Peak on-state voltage; I_T = 1 A
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
• Storage temperature range (T_S) is -65 °C to +150 °C.
• The case (T_C) or lead (T_L) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
• Junction temperature range (T_J) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; t1/16" (1.59 mm) from case.
Electrical Specification Notes
(1) See 4 for V_BO change versus junction temperature.
(2) See 4 for I_BO versus junction temperature.
(3) See 3 for I_H versus case temperature.
(4) See 5 for test circuit.
(5) See 3 for more than one full cycle rating.
(6) T_C d 90 °C for TO-92 Sidac
T_C d 105 °C for TO-202 Sidacs
T_L d 100 °C for DO-15X
T_L d 90 °C for DO-214
(7) See 5 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
less than switching resistance.
(9) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
+I
I_T
I_H
R_S
I_S
I_DRM ^IBO
-V
R_S
=
(V_BO
(I_S -
- V_S)
I_BO)
+V
V_BO
V_T
V_S
V_DRM
-I
V-I Characteristics
2