IRFZ44V Datasheet, PDF (2/5 Pages) International Rectifier – Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A)

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ORDERING INFORMATION
Part Number
Package
....................IRFZ44V................................................TO-220
IRFZ44V
N-CHANNEL Power MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Symbol
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 µA)
VDSS
Breakdown Voltage Temperature Coefficient
(Reference to 25к, ID = 250 µA)
ӔVDSS/ǻTJ
Drain-to-Source Leakage Current
IDSS
(VDS = 60 V, VGS = 0 V, TJ = 25к)
(VDS = 48 V, VGS = 0 V, TJ = 150к)
Gate-to-Source Forward Leakage
IGSS
(VGS = 20 V)
Gate-to-Source Reverse Leakage
IGSS
(VGS = -20 V)
ON Characteristics
Gate Threshold Voltage
(VDS = VGS, ID = 250 µA)
VGS(th)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 V, ID = 60A)
RDS(on)
Forward Transconductance (VDS = 15 V, ID = 60A) (Note 4)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Total Gate Charge (VGS = 10 V)
(VDS = 30 V, ID = 60 A,
Qg
Gate-to-Source Charge
VGS = 10 V) (Note 5)
Qgs
Gate-to-Drain (“Miller”) Charge
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 30 V, ID = 60 A,
VGS = 10 V,
RG = 9.1ȍ) (Note 5)
td(on)
trise
td(off)
tfall
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
IS
Integral pn-diode in MOSFET
Pulse Source Current (Body Diode)
ISM
Diode Forward On-Voltage
(IS = 60 A, VGS = 0 V)
VSD
Reverse Recovery Time
Reverse Recovery Charge
(IF = 60A, VGS = 0 V,
trr
di/dt = 100A/µs)
Qrr
cIRFZ44V
Min
Typ
Max
Units
60
V
0.069
mV/к
µA
25
250
100
nA
-100
nA
1.0
2.0
3.0
V
mȍ
16.5
36
S
1430
pF
420
pF
88
pF
37.7
nC
8.4
nC
9.8
nC
12.1
ns
64
ns
69
ns
39
ns
60
A
241
A
1.5
V
55
ns
110
nC
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