STP3NB80 Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

STP3NB80
!
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
‹ Higher Current Rating
withstand high energy in the avalanche mode and switch ‹ Lower Rds(on)
efficiently. This new high energy device also offers a
‹ Lower Capacitances
drain-to-source diode with fast recovery time. Designed for ‹ Lower Total Gate Charge
high voltage, high speed switching applications such as
‹ Tighter VSD Specifications
power supplies, converters, power motor controls and
‹ Avalanche Energy Specified
bridge circuits.
PIN CONFIGURATION
TO- TO-220FP
Top View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Derate above 25к
Symbol
ID
IDM
VGS
VGSM
PD
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 50V, VGS = 10V, ID = 3A, L = 10mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TJ, TSTG
EAS
șJC
șJA
TL
Value
3.0
12
±30
±40
35
0.28
Unit
A
V
V
W
W/к
-65 to 150 ......к
176
mJ
1.70
62
.300
к/W
к
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