STC9015 Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – PNP Silicon Transistor

STC9015
PNP Silicon Transistor
Low Frequency Amplifier
• Collector-Base Voltage : V_CBO= -60V
• Complement to STC9014
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-60
-50
-5
-150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
V_BE (on)
f_T
C_ob
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
I_C= -100µA, I_E=0
I_C= -10mA. I_B=0
I_E = -10µA. I_C=0
V_CB= --60V, I_E=0
V_EB= -5V, I_C=0
V_CE= -6V, I_C= -1mA
I_C= -100mA, I_B= -10mA
V_CE= -6V, I_C= -1mA
V_CE= -6V, I_C= -10mA
V_CB= -10V, I_E = 0, f=1MHz
V_CE= -6V, I_C= -0.3mA
f=1MHz, Rs=10kΩ
Min.
-60
-50
-5
40
-0.50
50
Typ.
-0.18
-0.62
180
2.8
6.0
Max.
-100
-100
700
-0.3
-0.80
20
Units
V
V
V
nA
nA
V
V
MHz
pF
dB
h_FE Classification
Classification
h_FE
A
40 ~ 140
B
120 ~ 240
C
200 ~ 400
D
350 ~ 700
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