STC9014 Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – NPN Silicon Transistor

STC9014
NPN Silicon Transistor
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to STC9015
• Collector-Base Voltage : V_CBO=60V
• High Current Gain Bandwidth Product : f_T=300MHz (TYP)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
f_T
C_ob
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
I_C=100µA, I_E=0
I_C=10mA, I_B=0
I_E=10µA, I_C=0
V_CB=40V, I_E=0
V_EB=3V, I_C=0
V_CE=6V, I_C=1.0mA
I_C=100mA, I_B=10mA
V_CE=6V, I_C=10mA
V_CB=6V, I_E=0, f=1MHz
V_CE=6V, I_C=0.5mA
f=1KHz, R_S=500Ω
h_FE Classification
Classification
h_FE
A
40 ~ 140
B
120 ~ 240
C
200 ~ 400
1
TO-92
1. Emitter 2. Collector 3. Base
Value
60
50
5
150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Min.
60
50
5
40
Typ.
0.15
300
2.5
4.0
Max.
0.1
0.1
700
0.3
Units
V
V
V
µA
µA
V
MHz
pF
dB
D
350 ~ 700
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