STC8550S Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – PNP Silicon Transistor

STC8550S
PNP Silicon Transistor
Low Voltage High Current Radios in
Class B Push-pull Operation.
• Complimentary to STC8050S
• Collector Current: I_C=0.8A
• Collector Power Dissipation: P_C=0.7W (T_C=25°C)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-40
-40
-6
-0.8
0.7
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE (sat)
V_BE (sat)
V_BE (on)
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
I_C= -100µA, I_E=0
I_C= -2mA, I_B=0
I_E= -100µA, I_C=0
V_CB= -15V, I_E=0
V_EB= -6V, I_C=0
V_CE= -1V, I_C= -5mA
V_CE= -1V, I_C= -50mA
V_CE= -1V, I_C= -500mA
I_C= -500mA, I_B= -50mA
I_C= -500mA, I_B= -50mA
V_CE= -1V, I_C= -10mA
V_CB= -10V, I_E=0
f=1MHz
f_T
Current Gain Bandwidth Product
V_CE= -10V, I_C= -50mA
Min.
-40
-40
-6
45
85
40
100
Typ.
170
100
-0.28
-0.98
-0.66
15
200
Max.
-50
-50
Units
V
V
V
nA
nA
400
-0.5
V
-1.2
V
-1.0
V
pF
MHz
h_FEClassification
Classification
h_FE2
A
85 ~ 160
B
120 ~ 200
C
200 ~ 400