STC8050 Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – NPN Silicon Transistor

STC8050
0
NPN Silicon Transistor
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8550
• Collector Current: I_C=1.5A
• Collector Power Dissipation: P_C=2W (T_C=25°C)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
40
40
6
1.5
1
150
65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE (sat)
V_BE (sat)
V_BE (on)
C_ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Test Condition
I_C= 100µA, I_E=0
I_C= 2mA, I_B=0
I_E= 100µA, I_C=0
V_CB= 35V, I_E=0
V_EB= 6V, I_C=0
V_CE= 1V, I_C= 5mA
V_CE= 1V, I_C= 100mA
V_CE= 1V, I_C= 800mA
I_C= 800mA, I_B= 80mA
I_C= 800mA, I_B= 80mA
V_CE= 1V, I_C= 10mA
V_CB= 10V, I_E=0
f=1MHz
f_T
Current Gain Bandwidth Product
V_CE= 10V, I_C= -50mA
Min.
40
40
6
45
85
40
100
Typ.
170
160
80
0.28
0.98
0.66
15
200
Max.
100
100
Units
V
V
V
nA
nA
300
0.5
V
1.2
V
1.0
V
pF
MHz
h_FEClassification
Classification
h_FE2
A
85 ~ 160
B
120 ~ 200
C
200 ~ 400