STC2SD882_TO252 Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – NPN EPITAXIAL SILICON TRANSISTOR

STC2SD882 NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772
APPLICATIONS
1
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-252
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
30
Emitter-base voltage
VEBO
5
Collector dissipation( Tc=25°C)
Pc
10
Collector dissipation( Ta=25°C)
Pc
1
Collector current(DC)
Ic
3
Collector current(PULSE)
Ic
7
Base current
IB
0.6
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
W
W
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=3V,Ic=0
DC current gain(note 1)
hFE1
VCE=2V,Ic=20mA
30
hFE2
VCE=2V,Ic=1A
100
Collector-emitter saturation voltage VCE(sat)
Ic=2A,IB=0.2A
Base-emitter saturation voltage
VBE(sat)
Ic=2A,IB=0.2A
Current gain bandwidth product
fT
VCE=5V,Ic=0.1A
Output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
TYP
200
150
0.3
1.0
80
45
MAX
1000
1000
UNIT
nA
nA
0.5
V
2.0
V
MHz
pF
1