STC2907A Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – PNP Silicon Transistor

STC2907A
PNP Silicon Transistor
General Purpose Transistor
• Collector-Emitter Voltage: V_CEO= 60V
• Collector Power Dissipation: P_C (max)=625mW
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
-60
-60
-5
-600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
C_ob
Collector-Base Breakdown Voltage
* Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
* Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
I_C= -10µA, I_E=0
I_C= -10mA, I_B=0
I_E= -10µA, I_C=0
V_CB= -50V, I_E=0
I_C= -0.1mA, V_CE= -10V
V_CE= -10V, I_C= -1mA,
V_CE= -10V , I_C= -10mA
V_CE= -10V, *I_C= -150mA
V_CE= -10V, *I_C= -500mA
I_C= -150mA, I_B= -15mA
I_C= -500mA, I_B= -50mA
I_C= -150mA, I_B= -15mA
I_C= -500mA, I_B= -50mA
V_CB= -10V, I_E=0
f=1MHz
f_T
* Current Gain Bandwidth Product
I_C= -50mA, V_CE= -20V
f=100MHz
t_ON
Turn On Time
t_OFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CC= -30V, I_C= -150mA
I_B1= -15mA
V_CC= -6V, I_C= -150mA
I_B1=I_B2= -15mA
Min.
-60
-60
-5
75
100
100
100
50
200
Typ.
Max.
-10
Units
V
V
V
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
8
pF
MHz
45
ns
100
ns