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| STC2222A Datasheet, PDF (1/2 Pages) Suntac Electronic Corp. – NPN Silicon Transistor | |||
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STC2222A
NPN Silicon Transistor
General Purpose Transistor
⢠Collector-Emitter Voltage: VCEO= 40V
⢠Collector Power Dissipation: PC (max)=625mW
⢠Refer STC2222 for graphs
NPN Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=3V, IC=0
IC=0.1mA, VCE=10V
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, *IC=150mA
VCE=10V, *IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA
f=100MHz
Cob
Output Capacitance
tON
Turn On Time
tOFF
Turn Off Time
NF
Noise Figure
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
*
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=150mA
IB1=15mA, VBE(off)=0.5V
VCC=30V, IC=150mA
IB1=IB2=15mA
IC=100µA, VCE=10V
RS=IKâ¦, f=1KHz
Value
75
40
6
600
625
150
-55 ~ 150
Min.
75
40
6
Typ.
35
50
75
100
40
0.6
300
Units
V
V
V
mA
mW
°C
°C
Max.
0.01
10
Units
V
V
V
µA
nA
300
0.3
V
1
V
1.2
V
2
V
MHz
8
pF
35
ns
285
ns
4
dB
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