IRF6N40 Datasheet, PDF (1/3 Pages) Suntac Electronic Corp. – POWER MOSFET

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GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
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PIN CONFIGURATION
TO-220
Top View
IRF6N40
POWER MOSFET
FEATURES
‹ Higher Current Rating
‹ Lower r_DS(ON), Lower Capacitances
‹ Lower Total Gate Charge
‹ Tighter VSD Specifications
‹ Avalanche Energy Specified
SYMBOL
D
G
S
12 3
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ORDERING INFORMATION
N-Channel MOSFET
Part Number
Package
IRF6N40................................................TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed (Note 1)
Gate-to-Source Voltage Ё Continue
Total Power Dissipation
Derate above 25к
Single Pulse Drain-to-Source Avalanche Energy Ё T_J = 25к
(V_DD = 100V, V_GS = 10V, I_L = 6A, L = 10mH, R_G = 25ȍ)
Operating and Storage Temperature Range
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
I_D
I_DM
V_GS
P_D
E_AS
T_J, T_STG
ș_JC
ș_JA
T_L
Value
6.0
21
±20
96
0.77
180
-55 to 150
1.70
62
300
Unit
A
V
W
W/к
mJ
к
к/W
к
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