IRF640 Datasheet, PDF (1/6 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
IRF640
POWERTR MOSFET
FEATURES
‹ Silicon Gate for Fast Switching Speeds
‹ Low RDS(on) to Minimize On-Losses. Specified at Elevated
Temperature
‹ Rugged – SOA is Power Dissipation Limited
‹ Source-to-Drain Characterized for Use With Inductive
Loads
PIN CONFIGURATION
TO-220
Front View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
.....................IRF640...............................................TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Derate above 25к
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
șJC
șJA
TL
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
Value
18
72
±20
±40
125
1.00
-55 to 150
224
1.00
62.5
260
Unit
A
V
V
W
W/к
к
mJ
к/W
к
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