IRF630 Datasheet, PDF (1/6 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

!
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
PIN CONFIGURATION
TO-220
Top View
IRF630
POWER MOSFET
FEATURES
‹ Dynamic dv/dt Rating
‹ Repetitive Avalanche Rated
‹ Fast Switching
‹ Ease of Paralleling
‹ Simple Drive Requirements
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
.....................IRF630................................................TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed (Note 1)
Gate-to-Source Voltage Ё Continue
Total Power Dissipation
Derate above 25к
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Operating and Storage Temperature Range
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
șJC
șJA
TL
Value
Unit
9.0
A
36
±20
V
74
W
0.59
W/к
250................mJ
9.0
A
7.4
mJ
5.0
V/ns
-55 to 150
к
1.70
к/W
62
300
к
Page 1