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IRF4N60 Datasheet, PDF (1/4 Pages) Suntac Electronic Corp. – POWER MOSFET | |||
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IRF4N60
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POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
 Higher Current Rating
withstand high energy in the avalanche mode and switch  Lower Rds(on)
efficiently. This new high energy device also offers a
 Lower Capacitances
drain-to-source diode with fast recovery time. Designed for  Lower Total Gate Charge
high voltage, high speed switching applications such as
 Tighter VSD Specifications
power supplies, converters, power motor controls and
 Avalanche Energy Specified
bridge circuits.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ð Continuous
Ð Pulsed
Gate-to-Source Voltage Ð Continue
Ð Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy РTJ = 25к
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25È)
Thermal Resistance Ð Junction to Case
Ð Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
ÈJC
ÈJA
TL
Value
4.0
18
±20
±40
96
38
-55 to 150
80
1.70
62
300
Unit
A
V
V
W
к
mJ
к/W
к
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