IRF40N03 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL Power MOSFET

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APPLICATION
‹Fast Switching
‹Simple Drive Requirement
‹Low Gate Charge
V_DSS
R_DS(ON) Max.
30V
..17.0mȍ
PIN CONFIGURATION
TO-220
Front View
IRF40N03
N-CHANNEL Power MOSFET
FEATURES
‹ Low ON Resistance
‹ Low Gate Charge
‹ Peak Current vs Pulse Width Curve
‹ Inductive Switching Curves
I_D
40A
SYMBOL
D
G
12 3
ʳ
ABSOLUTE MAXIMUM RATINGS
S
N-Channel MOSFET
Rating
Drain to Source Voltage (Note 1)
Drain to Current Ё Continuous Tc = 25к, V_GS@10V
Ё Continuous Tc = 100к, V_GS@10V
Ё Pulsed Tc = 25к, V_GS@10V (Note 2)
Gate-to-Source Voltage Ё Continue
Total Power Dissipation
Derating Factor above 25к
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=144µH,I_D=40 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
V_DSS
I_D
I_D
I_DM
V_GS
P_D
dv/dt
T_J, T_STG
E_AS
T_L
T_PKG
I_AS
Value
30
40
30
170
±20
.50
0.4
4.5
-55 to 175
500
300
260
60
Unit
V
A
V
W
W/к
V/ns
к
mJ
к
к
A
THERMAL RESISTANCE
Symbol
Parameter
R_șJC
Junction-to-case
Min Typ
R_șJA
Junction-to-ambient
Max
2.5
62
Units
к
к/W
Test Conditions
Water cooled heatsink, P_D adjusted for a peak junction
temperature of +175к
1 cubic foot chamber, free air
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