CR02AM Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE PLANAR PASSIVATION TYPE

NCR169D
A^A dvance Information
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Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-92 package.
• Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
• On–State Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability – 10 Amperes
• Immunity to dV/dt – 20 V/µsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Blocking Voltage to 600 Volts
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage (Note 1.) V_DRM,
600
(T_J = *40 to 110°C, Sine Wave, 50 to
V_RRM
60 Hz; Gate Open)
On-State RMS Current
(T_C = 80°C) 180° Conduction Angles
I_T(RMS)
0.8
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T_J = 25°C)
Circuit Fusing Consideration (t = 10 ms)
I_TSM
10
I²t
0.415
Forward Peak Gate Power
(T_A = 25°C, Pulse Width v 1.0 µs)
Forward Average Gate Power
(T_A = 25°C, t = 20 ms)
Forward Peak Gate Current
(T_A = 25°C, Pulse Width v 1.0 µs)
Reverse Peak Gate Voltage
(T_A = 25°C, Pulse Width v 1.0 µs)
Operating Junction Temperature Range
@ Rate V_RRM and V_DRM
P_GM
0.1
P_G(AV)
0.10
I_GM
1.0
V_GRM
5.0
T_J
–40 to
110
Storage Temperature Range
T_stg
–40 to
150
Unit
Volts
Amp
Amps
A²s
Watt
Watt
Amp
Volts
°C
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
SCR
0.8 AMPERES RMS
600 VOLTS
G
A
K
1
2
3
TO−92 (TO−226)
CASE 029
STYLE 10
PIN ASSIGNMENT
14
Cathode
2
Anode
3
Gate
© Semiconductor Components Industries, LLC, 2000
1
December, 2000 – Rev. 0
Publication Order Number:
NCR169D/D