BT134 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Triacs

BT134 series
!
Triacs logic level
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal cycling
performance. Typical applications include
motor control, industrial and domestic
lighting, heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
BT134-
V_DRM
I_T(RMS)
I_TSM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600
UNIT
600
V
4
A
25
A
PINNING - TO126
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
2
PIN CONFIGURATION
tab
1 23
SYMBOL
T2
T1
G
LIMITING VALUES
L
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 107 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 6 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
600¹
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.400