2SD788 Datasheet, PDF (1/2 Pages) Renesas Technology Corp – Silicon NPN Epitaxial

2
2SD788
!_S!
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
20
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
2
A
Peak collector current
I_CP
6
A
Collector power dissipation
P_C
900
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
5.0±0.2
B
C
Unit: mm
4.0±0.2
0.7±0.1
N
K
E
G
D
0.45^{+–00..115}
2.5^{+–0H0..26}
F
F
2.5^{+–00..26}
1
1 23
23
DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
0.^GH45^{+–00..115}
0.85
0.45
J
14.00 +0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1:¹E^.0m⁰ itter
1. EMITTER
2. COLLECTOR
3. BASE
2: Collector
3: Base
TO-92 Package
TO-92
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CEO
V_EBO
I_CBO
I_CEO
I_EBO
h_FE1 ^*
h_FE2
V_CE(sat)
f_T
C_ob
I_C = 1 mA, I_B = 0
I_E = 10 µA, I_C = 0
V_CB = 16 V, I_E = 0
V_CE = 10 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 2 V, I_C = 0.1A
V_CE = 2 V, I_C = 1 A
I_C = 1 A, I_B = 0.1 A
V_CB = 2 V, I_C = 1 0 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Note) 1. Rank classification
CLA²S^. SIFICATION OF hFE2
RANK
A
RANGE
100-300
.....B
250-500
Min Typ Max Unit
20
V
6
V
2
µA
1
µA
0.2
µA
100
700
150
0.3
V
100
MHz
20
PF
....C
400-700
1