2SA1797 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (-50V, -3A)

2SA1797
Power Transistor (-50V, -3A)
ʳ
Ï¥Features
1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
2) Excellent DC current gain characteristics.
4) Complements the 2SA1797.
ϥAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector current
-3
A (DC)
IC
-5
A (Pulse) *
1
0.5
Collector power
dissipation
2SA1797
PC
2 *2
W
1 *3
Junction temperature
Tj
150
к
Storage temperature
Tstg
-55~ 150
к
*1 Single pulse, Pw=10ms
*2 When mounted on a 40x 40x 0.7mm ceramic board.
*3 Printed circuit board 1.7mm thick, collector plating 1cф or larger.
SOT-89
Ï¥Packaging specifications and hFE
Type
2SA1797
Package
SOT-89
hFE
PQ
Marking
AG
Code
T100
Basic ordering unit (Pieces) 1000
*Denotes hF E
1:EMITTER 2:COLLECTOR 3:BASE
ϥElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
-50
V
ICГ-50uA
Collector-emitter breakdown voltage
BVCEO
-50
V
ICГ-1 mA
Emitter-base breakdown voltage
BVEBO
-6
V
IEГ-50uA
Collector cutoff current
ICBO
-0.1
µA
VCBГ-50V
Emitter cutoff current
IEBO
-0.1
µA VEBГ-5V
Collector-emitter saturation voltage
VCE(sat)
-0.15 -0.35
V
IC/IBГ-1A/-50mA
*
DC current
transfer ratio
2SA1797
Transition frequency
Output capacitance
*Measured using pulse current
hFE
82
270
VCE/ICГ-2V/-0.5A
*
fT
Cob
200
MHz _{VCEГ-2V, IEГ0.5A, fГ100MHz}
36
pF
VCBГ-10V, IEГ0A, f Г1MHz
1