S9014 Datasheet, PDF (2/3 Pages) Weitron Technology – NPN General Purpose Transistors

Electrical Characteristics T_A = 25°C unless otherwise specified
Parameter
Symbol Test conditions
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
Collector-emitter breakdown voltage _{V(BR)CEO IC=0.1mA,IB=0}
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
Collector cut-off current
I_CBO
Collector cut-off current
I_CEO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE
V_CE(sat)
Base-emitter saturation voltage
V_BE(sat)
Transition frequency
f_T
V_CB=50V,I_E=0
V_CE=35V,I_B=0
V_EB=3V,I_C=0
V_CE=5V,I_C=1mA
I_C=100mA, I_B= 5mA
I_C=100mA, I_B= 5mA
V_CE=6V, I_C= 20mA
f=30MHz
Range
Rank
L
200-450
MIN _{TYP MAX UNIT}
50
V
45
V
5
V
0.1 μA
0.1 μA
0.1 μA
200
1000
0.3 V
1
V
150
MHz
H
450-1000
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