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RB531S-30 Datasheet, PDF (2/3 Pages) Rohm – Schottky Barrier Diode
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1000
Ta=125C
100
Ta=75C
10
1
0.1
Ta=-25C
Ta=25C
10000
1000
100
10
1
0.01
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
0.01
0
300
30
Ta=25C
290
VF=10mA
25
n=30pcs
20
280
15
270
10
AVE : 270.2mV
260
5
250
0
VF DISPERSION MAP
100
Ta=125C
Ta=75C
Ta=25C
10
Ta=-25C
f=1MHｚ
10
20
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
Ta=25C
19
VR=10V
18
n=30pcs
17
16
15
14
13
AVE : 2.037A
12
11
10
AVE : 17.34pF
Ta=25C
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
AVE : 3.90A
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM -CYCLE CHARACTERISTICS
0
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
1ms time
10
0.001
300s
0.01 0.1
1
10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
0.1
0.08
D=1/2
0.06
Sin(=180)
0.04
0.02
0.1
0.08
DC
0.06
0.04
D=1/2
DC
0.02
Sin(=180)
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
2of3
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