MMBT2907A Datasheet, PDF (2/4 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR

Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-10µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-10µAdc, IC=0)
Base Cutoff Current
(VCE=-30Vdc, VBE=-0.5Vdc)
Collector Cutoff Current
(VCE=-30Vdc, VBE=-0.5Vdc)
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
(VCB=-50Vdc, IE=0, TA=150°C)
DC Current Gain*
(IC=-0.1mAdc, VCE=-10Vdc)
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-150mAdc, VCE=-10Vdc)
(IC=-500mAdc, VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(I = 500mAdc, I = 50mAdc)
Current Gain-Bandwidth Product
(IC=-50mAdc, VCE=-20Vdc, f=100MHz)
Output Capacitance
(VCB=-10Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB=-2.0Vdc, IC=0, f=1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=-3.0Vdc, IC=-150mAdc,
IB1=-15mAdc)
(VCC=-3.0Vdc, IC=-150mAdc
IB1=IB2=-15mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
BL
ICEX
ICBO
hFE
VCE(sat)
VBE(sat)
fT
Ccbo
Cibo
td
tr
ts
tf
Min
-60
-60
-5.0
75
100
100
100
50
200
Max
-50
-50
-0.1
-10.0
300
-0.4
-1.6
-1.3
-2.6
8.0
30.0
10
40
80
30
Units
Vdc
Vdc
Vdc
nAdc
nAdc
µAdc
Vdc
Vdc
MHz
pF
pF
ns
ns
ns
ns