ESJA19-10 Datasheet, PDF (2/2 Pages) SUNMATE electronic Co., LTD – 5mA Axial Leaded High Voltage Diode

30
20
I
F
[mA]
10
Tj= 25°C
Tj=100°C
ESJA19-10
ESJA19-12
0.1
I_R
[µA]
0.01
0
0
20
40
60
80
V _F [V]
Forward Characteristics
1E-3
0
ESJA19-10
ESJA19-12
Tj=100°C
ESJA19-10
ESJA19-12
Tj= 25°C
4
8
12
16
V _R [kV]
Reverse Characteristics
1.0
0.8
Cj _0.6
[pF]
0.4
0.2
Tj=25°C
f=1MHz
ESJA19-10
ESJA19-12
100
80
N ⁶⁰
[pcs.] 40 _ESJA19-10
20
Tj= 25°C
I_R=100 µA
N=100pcs.
ESJA19-12
0.0
0
40
80 120 160 200
V [V]
Bias
Junction Capacitance Characteristics
ESJA19-10
100
50
Tj= 25°C
N=100pcs.
0
8
12
16
20
24
28
V [kV]
AV
Avalanche Breakdown Voltage
0.01µF D.U.T
1kohm
150
kohm
100ohm
N⁰
100
[pcs.]
50
ESJA19-12
0
0.00
0.02
0.04
0.06
0.08
trr ( µ s)
Reverse Recovery Time
0.10
2 of 2
IF=2mA
0
IR=4mA
OSCILLO SCOPE
1mA
trr