BC858 Datasheet, PDF (2/2 Pages) AUK corp – PNP Silicon Transistor (General purpose application Switching application)

BC856A thru BC858C
Electrical Characteristics @ TA =25°C unless otherwise specified
Characteristic
Symbol Min Typ
Collector-Base Breakdown Voltage (Note 3)
BC856
-80 —
BC857 V(BR)CBO -50
—
BC858
-30 —
Collector-Emitter Breakdown Voltage (Note 3)
BC856
-65 —
BC857 V(BR)CEO -45
—
BC858
-30 —
Emitter-Base Breakdown Voltage (Note 3)
V(BR)EBO -5
—
H-Parameters
Small Signal Current Gain
Current Gain Group A
hfe
— 200
B
hfe
— 330
C
hfe
— 600
Input Impedance
Current Gain Group A
hie
— 2.7
B
hie
— 4.5
C
hie
— 8.7
Output Admittance
Current Gain Group A
hoe
—
18
B
hoe
—
30
C
hoe
—
60
Reverse Voltage Transfer Ratio Current Gain Group A
hre
— 1.5x10-4
B
hre
— 2x10-4
C
hre
— 3x10-4
DC Current Gain (Note 3)
Current Gain Group A
125 180
B
hFE 220 290
C
420 520
Thermal Resistance, Junction to Substrate Backside
RqJSB
—
—
Thermal Resistance, Junction to Ambient
RqJA
—
—
Collector-Emitter Saturation Voltage (Note 3)
VCE(SAT) —
-75
-250
Base-Emitter Saturation Voltage (Note 3)
VBE(SAT)
—
—
-700
-850
Base-Emitter Voltage (Note 3)
VBE(ON)
-600
—
-650
—
Collector-Cutoff Current (Note 3)
BC856 ICES
—
—
BC857 ICES
—
—
BC858 ICES
—
—
ICBO
—
—
ICBO
—
—
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
320
625
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
Unit
Test Condition
V IC = 10mA, IB = 0
V IC = 10mA, IB = 0
V IE = 1mA, IC = 0
—
—
—
kW
kW VCE = -5.0V, IC = -2.0mA,
kW f = 1.0kHz
µS
µS
µS
—
—
—
— VCE = -5.0V, IC = -2.0mA
°C/W
°C/W
mV
mV
mV
nA
nA
nA
nA
µA
Note 1
Note 1
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCE = -80V
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product
fT
100 200
—
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance
Noise Figure
CCBO
—
3
NF
—
2
Notes:
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.
2. Current gain subgroup “C” is not available for BC856.
3. Short duration pulse test to minimize self-heating effect.
—
pF VCB = -10V, f = 1.0MHz
VCE = -5.0V, IC = 200µA,
10
dB RS = 2kW, f = 1kHz,
Df = 200Hz
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