2SC945 Datasheet, PDF (2/3 Pages) NEC – NPN Silicon Transistor(AF amplifier and low speed switching)

Electrical Characteristics T_A = 25°C unless otherwise specified
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=0.1mA,IE=0}
60
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=1mA,IB=0}
50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=0.1mA,I_C=0
5
V
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
0.1 μA
Collector cut-off current
I_CEO
V_CE=50V,I_B=0
0.1 μA
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
DC current gain
V_CE=6V,I_C=1mA
130
h_FE
V_CE=6V,I_C=0.1mA
40
Collector-emitter saturation voltage _VCE(sat) I_C=100mA, I_B=10mA
0.1 μA
400
0.3 V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
V_BE(sat)
f_T
C_ob
NF
I_C=100mA, I_B=10mA
V_CE=6V, I_C=10mA
f=30MHz
V_CB=10V,I_E=0,f=1MHz
V_CE=6V, I_C=0.1mA
f=1kMHz,R_g=10kΩ
150
3.0
4
1V
MHz
pF
10 dB
Range
Rank
L
130-200
H
200-400
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