ZHCS400 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

ZHCS400
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
VOLTAGE RANGE: 40V
CURRENT: 400m A
Features
! ^{Low VF}
! ^{High current capability}
! _{Miniature surface mount package}
Mechanical Data
! Case: SOD-323, Molded Plastic
! ^{Case material - UL Flammability Rating}
! ^{Classification 94V-0}
! Marking: S40
! Weight: 0.004 grams (approx.)
A
SOD-323
C
Dim Min
Max
D
A
2.30 2.70
B
B
1.75 1.95
C
1.15 1.35
E
D
0.25 0.35
G
E
0.05 0.15
G
0.70 0.95
H
0.30
—
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I_F =400mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
tՅ100μs
tՅ10ms
Power Dissipation at T_amb=25°C
Storage Temperature Range
SYMBOL
V_R
I_F
V_F
I_FAV
I_FSM
P_tot
T_stg
H
VALUE
40
400
500
1000
6.75
3
250
-55 to +150
UNIT
V
mA
mV
mA
A
A
mW
°C
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
SYMBOL
V_(BR)R
V_F
Reverse Current
I_R
Diode Capacitance
C_D
MIN.
40
TYP. MAX.
60
270 300
300 350
370 460
425 500
550 670
640 780
810 1050
440
15 40
20
UNIT
V
mV
mV
mV
mV
mV
mV
mV
mV
μA
pF
CONDITIONS
I_R=200μA
I_F=50mA
I_F=100mA
I_F=250mA
I_F=400mA
I_F=750mA
I_F=1000mA
I_F=1500mA
I_F=500mA, T_amb=100°C
V_R=30V
f=1MHz,V_R=25V
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