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US5A Datasheet, PDF (1/2 Pages) Semikron International – Ultrafast silicon rectifier diodes
US5A - US5M
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Ultra-Fast Recovery Time
!   Pla s tic C a s e M aterial has UL Fla m m ability                                             
Classification Rating 94V-O
B
SMC/DO-214AB
Mechanical Data
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.21 grams (approx.)
A
J
H
G
E
Dim Min Max
A
5.59 6.22
C
B
6.60 7.11
C
2.75 3.18
D
0.15 0.31
D
E
7.75 8.13
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol US5A US5B US5D US5G US5J US5K US5M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=55 C
VRRM 50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
VDC
50 100 200 400 600 800 1000
I(AV)
5.0
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method) TL=25 C
150.0
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance
Operating junction and storage temperature range
VF
IR
trr
CJ
RθJL
TJ,TSTG
1.0
50
15
1.40
10.0
300.0
15.0
-65 to +150
1.70
75
12
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Unit
V
V
V
A
A
V
µA
ns
pF
C/W
C
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