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US3ABF Datasheet, PDF (1/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER
US3ABF - US3MBF
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Ultra-Fast Recovery Time
B
! P lastic C ase M a teria l h a s U L F lam m a b ility                 C                  E            
Classification Rating 94V-O
Mechanical Data
! Case:SMBF , Molded Plastic
SMBF
Dim Min Max Typ
A 5.45 5.55 5.50
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
D
B 4.27 4.33 4.30
H
C 3.57 3.63 3.60
D 1.32 1.38 1.35
! Polarity: Cathode Band or Cathode Notch
L
! Marking: Type Number
E 1.96 2.00 1.98
H 0.019 0.021 0.20
L 0.73 0.77 0.75
! Weight: 0.0018 ounces,0.05grams
E
All Dimensions in mm
A
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol US3ABF US3BBF US3DBF US3GBF US3JBF US3KBF US3MBF Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=55 C
VRRM
50
100
200 400 600 800 1000
V
VRMS
35
70
140 280 420 560 700
V
VDC
50
100
200 400 600 800 1000
V
I(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
100.0
A
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
VF
1.0
1.30
1.70
V
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
IR
trr
CJ
RθJL
TJ,TSTG
5.0
µA
250.0
50
75
ns
75
pF
15.0
C/W
-65 to +150
C
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to lead and from junction to ambient with P.C.B mounted
on 0.3 x 0.3" (8.0 x 8.0 mm) Copper pad area
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