US2AF Datasheet, PDF (1/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT ULTRA FAST RECTIFIER

US2AF - US2MF
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Ultra-Fast Recovery Time
B
! Plastic Case Material has UL Flammability



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Mechanical Data
! Case:SMBF , Molded Plastic
! Terminals: Solder Plated, Solderable
D
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
L
! Marking: Type Number
! Weight: 0.0018 ounces,0.05grams
E
SMBF
Dim Min Max Typ
A 5.45 5.55 5.50
B 4.27 4.33 4.30
H
C 3.57 3.63 3.60
D 1.32 1.38 1.35
E 1.96 2.00 1.98
H 0.019 0.021 0.20
L 0.73 0.77 0.75
All Dimensions in mm
A
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T_L = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
@I_F = 2.0A
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol US2AF US2BF US2DF US2GF US2JF US2KF US2MF Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
2.0
A
IFSM
50
A
VFM
IRM
trr
Cj
R
JL
Tj, TSTG
1.0
1.4
1.7
10
50
50
75
20
50
-50 to +150
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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