US1AF Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT ULTRA FAST RECTIFIER

US1AF - US1MF
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Glass Passivated Die Construction
! Diffused Junction
! Ultra-Fast Recovery Time for High Efficiency
! ^{Low Forward Voltage Drop, High Current}
Capability, and Low Power Loss
! Ideally Suited for Automated Assembly
Mechanical Data
! Case: SMAF,Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity:Color band denotes cathode end
! ^{Mounting Position:Any}
! Weight:0.0018 ounce, 0.064 grams
B
C
E
D
H
L
E
A
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D _{0.097 1.03} 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
Characteristic
Symbol US1AF US1BF US1DF US1GF US1JF US1KF US1MF Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
50
V_R
RMS Reverse Voltage
V_{R(RMS) 35}
Average Rectified Output Current
@ T_T = 75°C IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load IFSM
(JEDEC Method)
Forward Voltage Drop
@ I_F = 1.0A V_FM
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_A = 25°C
@ T_A = 100°C
I_RM
Reverse Recovery Time (Note 2)
t_rr
Typical Junction Capacitance (Note 1)
C_j
Typical Thermal Resistance, Junction to Terminal
R_qJT
Operating and Storage Temperature Range
T_j, T_STG
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
1.0
A
30
A
1.0
1.3
1.7
5.0
100
50
75
20
10
30
-65 to +150
V
mA
ns
pF
°C/W
°C
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A.
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