US1AB Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER

VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! ^{Glass Passivated Die Construction}
! Diffused Junction
! Ultra-Fast Recovery Time for High Efficiency
! Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
! Ideally Suited for Automated Assembly
! Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.093 grams (approx.)}
US1AB - US1MB
SURFACE MOUNT ULTAFAST RECTIFIER DIODES
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
Characteristic
Symbol US1AB US1BB US1DB US1GB US1JB US1KB US1MB Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
50
V_R
RMS Reverse Voltage
V_{R(RMS) 35}
Average Rectified Output Current
@ T_T = 75°C IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load IFSM
(JEDEC Method)
Forward Voltage Drop
@ I_F = 1.0A V_FM
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_A = 25°C
@ T_A = 100°C
I_RM
Reverse Recovery Time (Note 2)
t_rr
Typical Junction Capacitance (Note 1)
C_j
Typical Thermal Resistance, Junction to Terminal
R_qJT
Operating and Storage Temperature Range
T_j, T_STG
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
1.0
A
30
A
1.0
1.3
1.7
5.0
100
50
75
20
10
30
-65 to +150
V
mA
ns
pF
°C/W
°C
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A.
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