UH1B Datasheet, PDF (1/2 Pages) Vishay Siliconix – Surface Mount Ultrafast Rectifiers

UH1B - UH1D
SURFACE MOUNT SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 100 - 200V
CURRENT: 1.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Super-Fast Recovery Time
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
SMA(DO-214AC)
M
e

c
h

a
n
i
c
a

l
D

a
t
a

































































^{D
i
m Min Max}
! Case: SMA/DO-214AC, Molded Plastic
A
C
A
2.29 2.92
B
4.00 4.60
! Terminals: Solder Plated, Solderable
C
1.27 1.63
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
D
D
0.15 0.31
E
4.80 5.59
! Marking: Type Number
J
G
0.10 0.20
! Weight: 0.064 grams (approx.)
H
G
E
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
UH1B
UH1C
UH1D
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
VR
VR(RMS)
100
70
150
200
105
140
Average Rectified Output Current @T_L = 120°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
IRM
Reverse Recovery Time (Note 1)
trr
1.0
30
0.76
5.0
500
25
Typical Junction Capacitance (Note 2)
Cj
17
Typical Thermal Resistance (Note 3)
R
JL
20
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
Unit
V
V
A
A
V
µA
nS
pF
°C/W
°C
1 of 2
www.sunmate.tw