UG3A Datasheet, PDF (1/2 Pages) Gulf Semiconductor – ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE：50 TO 200V CURRENT： 3.0A

VOLTAGE RANGE: 50 - 200V
CURRENT: 3.0 A
Features
! ^{Low power loss}
! ^{High surge capability}
! ^{Glass passivated chip junction}
! Ultra-fast recovery time for high efficiency
! ^{High temperature soldering guaranteed}
! 250℃/10sec/0.375″lead length at 5 lbs tension
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
UG3A - UG3D
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER DIODES
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
¾
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _UG3A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =50℃
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
3.0A Peak
Maximum DC Reverse Current Ta =25℃
at rated DC blocking voltage Ta =100℃
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operating Junction Temperature
Vrrm
50
Vrms
35
Vdc
50
If(av)
Ifsm
Vf
Ir
Trr
Cj
R(ja)
Tstg,Tj
Note ：
1. Reverse Recovery Condition If = 0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8 lead length, P.C. Board Mounted
UG3B UG3C
100
150
70
105
100
150
3.0
UG3D
200
140
200
125.0
0.95
5.0
250.0
20
26
25
-55 to +150
Unit
V
V
V
A
A
V
μA
μA
nS
pF
℃/W
℃
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