UG1A Datasheet, PDF (1/2 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER

UG1A - UG1D
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 200V
CURRENT: 1.0 A
Features
! Low power loss
! High surge capability
! Glass passivated chip junction
! ^{Ultra-fast recovery time for high efficiency}
! High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
UG1A
UG1B
UG1C
Maximum Recurrent Peak Reverse Voltage
Vrrm
50
Maximum RMS Voltage
Vrms
35
Maximum DC blocking Voltage
Vdc
50
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =75℃
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
1A Peak
If(av)
Ifsm
Vf
Maximum DC Reverse Current Ta =25℃
at rated DC blocking voltage Ta =125℃
Ir
Maximum Reverse Recovery Time (Note 1)
Trr
Typical Junction Capacitance
(Note 2)
Cj
100
150
70
105
100
150
1.0
40.0
0.95
5.0
200.0
15
7.0
Typical Thermal Resistance
(Note 3)
R(ja)
Storage and Operating Junction Temperature
Tstg,Tj
Note：
1. Reverse Recovery Condition If = 0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8 ″ lead length, P.C. Board Mounted
60.0
-55 to +150
UG1D
200
140
200
Unit
V
V
V
A
A
V
μA
μA
nS
pF
℃/W
℃
1 of 2
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