UF5AB Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT ULTRA FAST RECTIFIER DIODES

UF5AB - UF5MB
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
!
!

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Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.093 grams (approx.)
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) TL=25 C
Symbol _{UF5AB UF5BB UF5DB UF5GB UF5JB UF5KB UF5MB} Unit
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700
V
VDC ^{50 100 200 400 600 800 1000 V}
I(AV)
5.0
A
IFSM
150.0
A
Maximum instantaneous forward voltage at 5.0A
VF
1.0
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
trr
50
CJ
15
Typical thermal resistance (NOTE 3)
RθJL
Operating junction and storage temperature range
T_J,T_STG
Note:1.Reverse recovery condition IF=0.5A,I R=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. The r mal resistance from junction to lead and from junction to ambient with P.C.B ^mounted
on 0.3 x 0.3" (8.0 x 8.0 mm) Copper pad area
1.40
1.70
10.0
300.0
75
12
15.0
-65 to +150
V
µA
ns
pF
C/W
C
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