TVR4J Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J-TVR4N
2.0A Axial Leaded Fast Recovery Rectifier
Features
· Low cost
· Diffus ed junction
· ^{Low leakage}
· Low forward voltage drop
· High current capability
· _{Eas ily cleaned with Freon,Alcohol,Is opropanol}
and s im ilar s olvents
· The plas tic m aterial carries U/L recognition 94V-0
A
B
A
D
Mechanical Data
· Cas e:JEDEC DO-15,m olded plas tic
· _{Term inals : Axial lead ,s olderable per}
MIL- STD-202,Method 208
· Polarity: Color band denotes cathode
· Weight: 0.014 ounces ,0.39 gram s
· ^{Mounting pos ition: Any}
DO-15
Dim
Min
Max
A
25.40
¾
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TV R4J
TV R4N
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
V_RRM
V _{R MS}
V_DC
I_{F (AV)}
8.3ms single half -sine-w ave
superimposed on rated load
I_{F SM}
Maximum instantaneous f orw ard voltage
@ 1.5 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
N OTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance f rom junction to am bient.
1 of 2
600
420
600
1000
700
1000
2.0
50.0
1.3
5.0
1 0 0 .0
1000
20
40
-55----+150
-55----+150
C
UNITS
V
V
V
A
A
V
A
ns
pF
/W