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SS1A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SURFACE MOUNT SUPER FAST RECTIFIERS
SS1A - SS1M
SURFACE MOUNT SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! High current capability
! High surge current capability
! High reliability
! Low reverse current
! Low forward voltage drop
! Super fast recovery time
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
B
A
J
H
G
E
SMA(DO-214AC)
Dim Min Max
C
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum Recurrent Peak Reverse Voltage
Symbol SS1A SS1B SS1C SS1D SS1E SS1G SS1J SS1K SS1M Unit
VRRM 50 100 150 200 300 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 600 800 1000 Volts
Maximum Average Forward Current Ta = 55 °C
Peak Forward Surge Current
IF(AV)
1.0
Amp.
8.3 ms. Single half sine wave Superimposed
IFSM
on rated load (JEDEC Method)
30
Amps.
Maximum Peak Forward Voltage at IF = 1.0 Amp.
VF
0.95
1.4
1.7
Volts
Maximum DC Reverse Current Ta = 25 °C
IR
at Rated DC Blocking Voltage Ta = 100 °C
IR(H)
Maximum Reverse Recovery Time ( Note 1 )
Trr
5
µA
50
µA
35
ns
Typical Junction Capacitance ( Note 2 )
CJ
50
pf
Junction Temperature Range
Storage Temperature Range
TJ
TSTG
- 65 to + 150
°C
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
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