English
Language : 

SM101 Datasheet, PDF (1/2 Pages) Daesan Electronics Corp. – CURRENT 1.0 AMPERES VOLTAGE 50 TO 1000 VOLTS
SM101 - SM107
SUFACE MOUNT FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0A
Features
! Glass passivated device
! Ideal for surface mouted applications
! Low reverse leakage
! Metallurgically bonded construction
! High temperature soldering guaranteed:
! 250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
! Case: LL41(DO-213AB), Plastic
! Terminals: Solderable per MIL-STD-202,
Method 208
! Polarity: Cathode band
Approx Weight: 0.25 grams
! Mounting Position: Any
! Marking: Cathode Band Only
A
B
C
LL41//DO-213AB
Dim
Min
Max
A
4.80
5.20
B
2.40
2.60
C
0.55 Nominal
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol SM101 SM102 SM103 SM104 SM105 SM106 SM107
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
Maximum RMS voltage
VRMS
35
70
140
280
420
Maximum DC blocking voltage
VDC
50
100
200
400
600
Maximum average forward rectified current
I(AV)
at TA=65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method) TL=25 C
Maximum instantaneous forward voltage at 1.0A VF
1.0
30.0
1.3
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
Maximum reverse recovery time (NOTE 2)
trr
150
Typical junction capacitance (NOTE 3)
CJ
Typical thermal resistance (NOTE 4)
RθJA
Operating junction and storage temperature range TJ,TSTG
Note: 1.Averaged over any 20ms period.
2.Measured with IF=0.5A, IR=1A, Irr=0.25A.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.Thermal resistance junction to ambient, 6.0 mm2 coppeer pads to each terminal.
5.0
100.0
250
15
180
-50 to +150
800
1000
560
700
800 1000
500
Unit
V
V
V
A
A
V
µA
ns
pF
K/W
C
1 of 2
www.sunmate.tw