SD103A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD103A/B/CWS-V
2.0A Surface Mount Schottky Barrier Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
•
by a PN junction guard ring
This diode is also available in the
Mini-MELF case with the type designations LL103A
to LL103C, DO35 case with the type designations
SD103A to SD103C and SOD123 case with type
designations SD103AW-V to SD103CW-V
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing, and coupling diodes for fast switching
and low logic level applications
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· Case: SOD323 Plastic case
· Weight: approx. 4.3 mg
· Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
C
H
B
A
M
K
J
L
SOD-323
Dim Min Max
A
0.25 0.35
B
1.20 1.40
C
2.30 2.70
H
1.60 1.80
J
0.00 0.10
K
1.0 1.1
L
0.20 0.40
M 0.10 0.15
α
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Peak reverse voltage
Power dissipation
Single cycle surge
Parameter
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
Test condition
10 µs square wave
Test condition
V_R = 30 V
V_R = 20 V
V_R = 10 V
I_F = 20 mA
I_F = 200 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 50 mA to 200 mA,
recover to 0.1 I_R
Part
Symbol
SD103AWS-V
V_RRM
SD103BWS-V
V_RRM
SD103CWS-V
V_RRM
P_tot
I_FSM
Part
Symbol Min
SD103AWS-V
I_R
SD103BWS-V
I_R
SD103CWS-V
I_R
V_F
V_F
C_D
t_rr
1) _{Valid provided that electrodes are kept at ambient temperature}
Value
40
30
20
200¹⁾
2
Typ.
50
10
Unit
V
V
V
mW
A
Max
Unit
5
µA
5
µA
5
µA
370
mV
600
mV
pF
ns
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