SD101A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

Features
· _{For general purpose applications}
· _{The LL101 series is a metal-on-silicon Schottky}
barrier device which is protected by a PN junction
guard ring.
· The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
· _{These diodes are also available in the MiniMELF case}
with type designations LL101A thru LL101C.
· Pb / RoHS Free
Mechanical Data
· ^{Case: DO-35 Glass Case}
· ^{Weight: approx. 0.13g}
SD101A-SD101C
2.0A Axial Leaded Schottky Barrier Diodes
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Symbol
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10ms Square Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
Parameter
Symbol
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
V_(BR)R
I_R
V_F
Reverse Recovery Time
Trr
SD101A
SD101B
V_RRM
SD101C
I_FSM
P_D
R_θJA
T_J
T_S
Test Condition
I_R = 10 µA
V_R = 50 V
V_R = 40 V
V_R = 30 V
I_F = 1mA
I_F = 15mA
I_F = I_R = 5mA ,
recover to 0.1I_R
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Value
60
50
40
2
400⁽¹⁾
0.3⁽¹⁾
125⁽¹⁾
-55 to + 150 ⁽¹⁾
Min
Typ
Max
60
-
-
50
-
-
40
-
-
-
-
200
-
-
200
-
-
200
-
-
0.41
-
-
0.4
-
-
0.39
-
-
1.0
-
-
0.95
-
-
0.9
-
-
1
Unit
V
A
mW
°C/mW
°C
°C
Unit
V
nA
V
ns
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