SBYV26A Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A

SBYV26A- SBYV26E
SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 200 - 1000V
CURRENT: 1.0 A
Features
! Glass passivated
! High maximum operating temperature
! ^{Low leakage current}
! ^{Excellent stability}
! Guaranteed avalanche energy
absorption capability
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol SBYV26A SBYV26B SBYV26C SBYV26D SBYV26E _Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5 mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
V_RMS
V_DC
I_F(AV)
10ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
200
140
200
400
600
800
1000
V
280
420
560
700
V
400
600
800
1000
V
1.0
A
30.0
A
2.5
V
5.0
A
150.0
30
75
ns
45
40
pF
100
/W
- 55 ----- + 150
- 55 ----- + 150
1 of 2
www.sunmate.tw